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| MBT2222ADW Dual General Purpose Transistors NPN+NPN Silicon 3 2 1 65 4 1 2 3 4 5 6 SOT-363(SC-88) NPN+NPN VCEO Value (1) 150 833 TJ ,Tstg -55 to+150 MBT2222ADW=XX u 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint WEITRON http://www.weitron.com.tw MBT2222ADW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=0.1 mAdc, VCE=10 Vdc) (IC=1.0 mAdc, VCE=10 Vdc) (IC=10 mAdc, VCE=10 Vdc, TA =-55 C) (IC=150mAdc, VCE=10 Vdc) (2) (I C =150mAdc, VCE=1.0Vdc) (2) (IC=500 mAdc, VCE=10 Vdc) (2) 35 50 75 100 50 40 (2) 300 0.3 1.0 1.2 2.0 Vdc Vdc - hFE Collector-Emitter Saturation Voltage (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc) Base-Emitter Saturation (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc) Voltage (2) VCE(sat) 0.6 - VBE(sat) SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (3) (IC=20 mAdc, VCE=20 Vdc, f=100MHz) Output Capacitance (VCB=10 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB=0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) Voltage Feeback Radio (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) S mall-S ignal C urrent G ain (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) (I C =10 mAdc, V C E =10V dc, f=1.0 kHz) Output Admittance (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC=10 mAdc, VCE=10Vdc, f=-1.0kHz) Collector Base Time Constant (IE=20 mAdc, VCB=20 Vdc, f=31.8 MHz) Noise Figure (IC=100 Adc, VCE=10Vdc, RS=1.0k , f=1.0kHz) hie 2.0 0.25 0.8 1.25 k fT Cobo Cibo 300 8.0 25 MHz pF pF hre - 8.0 4.0 300 375 x 10-4 hfe 50 75 - hoe 5.0 25 - 35 200 150 4.0 mhos rb, Cc NF ps dB WEITRON http://www.weitron.com.tw MBT2222ADW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC=30 Vdc, VBE=(off)=-0.5Vdc, IC=150 mAdc, IB1=15 mAdc) (VCC=30 Vdc, IC=150 mAdc, IB1=IB2=15 mAdc) td tr ts tf 10 25 225 60 ns ns 2.Pulse Test:Pulse Width< 300 s, Duty Cycle< 2.0%. = = 3.fT is defined as the frequency at which Ihfe extrapolates to unity. S WIT C HING T IME E QUIVL E NT T E S T C IR C UIT S A + 30 V +16 V 0 -2V 1.0 to 100 s, DUTY CYCLE 2.0% 1 k 200 +16 V 0 < 2 ns CS * < 10 pF -14 V < 20 ns 1.0 to 100 s, DUTY CYCLE 2.0% 1k 1N914 + 30 V 200 CS * < 10 pF -4V S cope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. F igure 1. Turn-On T ime F igure 2. Turn-Off T ime 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k F igure 3. DC C urrent G ain WEITRON http://www.weitron.com.tw MBT2222ADW VCE , COLLECTOR-EMITTER VOL TAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (m A) 2.0 3.0 5.0 10 20 30 50 F igure 4. C ollec tor S aturation R egion 200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25 C tr @ V CC = 30 V td @ V EB(off) = 2.0 V td @ V EB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 t 's = ts - 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25 C t, TIME (ns) tf 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 F igure 5. Turn-On T ime 10 8.0 IC = 1.0 mA, R = 150 S 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k R S = OPTIMUM R S = SOURCE R S = RESIST ANCE 10 F igure 6. Turn-Off T ime f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 A 100 A 500 A 1.0 mA NF, NOISE FIGURE (dB) 6.0 6.0 4.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 2.0 0 50 0.5 1.0 2.0 5.0 10 20 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) R S , SOURCE RESIST ANCE (OHMS) F igure 7. F requenc y E ffec ts F igure 8. S ourc e R es is tanc e E ffec ts WEITRON http://www.weitron.com.tw MBT2222ADW 30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1 fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 500 VCE = 20 V TJ = 25 C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 F igure 9. C apac itanc es F igure 10. C urrentG ain B andwidth P roduc t 1.0 TJ = 25 C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ I C/IB = 10 0.6 VBE(on) @ V CE = 10 V 0.4 COEFFICIENT (mV/ C) 1.0 V +0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 VCE(sat) @ I C/IB = 10 - 2.5 0.1 0.2 R VB for VBE R VC for VCE(sat) 0.2 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k IC, COLLECTOR CURRENT (mA) 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 F igure 1 " On" Voltages 1. F igure 12. Temperature C oeffic ients WEITRON http://www.weitron.com.tw MBT2222ADW SOT-363 Package Outline Dimensions A Unit:mm SOT-363 4 6 5 BC 1 2 3 D E H K J L M Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 WEITRON http://www.weitron.com.tw |
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